Electronic device

ABSTRACT

An electronic device includes a semiconductor memory, and the semiconductor memory includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a ferromagnetic material with molybdenum (Mo) added thereto.

CROSS-REFERENCE TO RELATED APPLICATION

This patent document claims priority of Korean Patent Application No.10-2014-0069524, entitled “ELECTRONIC DEVICE AND METHOD FOR FABRICATINGTHE SAME” and filed on Jun. 9, 2014, which is incorporated herein byreference in its entirety.

TECHNICAL FIELD

This patent document relates to memory circuits or devices and theirapplications in electronic devices or systems.

BACKGROUND

Recently, as electronic devices or appliances trend towardminiaturization, low power consumption, high performance,multi-functionality, and so on, there is a demand for electronic devicescapable of storing information in various electronic devices orappliances such as a computer, a portable communication device, and soon, and research and development for such electronic devices have beenconducted. Examples of such electronic devices include electronicdevices which can store data using a characteristic switched betweendifferent resistance states according to an applied voltage or current,and can be implemented in various configurations, for example, an RRAM(resistive random access memory), a PRAM (phase change random accessmemory), an FRAM (ferroelectric random access memory), an MRAM (magneticrandom access memory), an E-fuse, etc.

SUMMARY

The disclosed technology in this patent document includes memorycircuits or devices and their applications in electronic devices orsystems and various implementations of an electronic device, in which anelectronic device facilitates fabricating processes and can improvecharacteristics of a variable resistance element.

In one aspect, an electronic device includes a semiconductor memory, andthe semiconductor memory includes a first magnetic layer having avariable magnetization direction; a second magnetic layer having apinned magnetization direction; and a tunnel barrier layer interposedbetween the first magnetic layer and the second magnetic layer, whereinthe second magnetic layer includes a ferromagnetic material withmolybdenum (Mo) added thereto.

Implementations of the above electronic device may include one or morethe following.

The ferromagnetic material is FeCoB. A concentration of the molybdenumof the second magnetic layer is less than 10%. The second magnetic layerhas a thickness of 10 Å or more and 30 Å or less. The first magneticlayer includes a ferromagnetic material same as the ferromagneticmaterial except for the molybdenum.

In another aspect, an electronic device includes a semiconductor memory,and the semiconductor memory includes a first magnetic layer having avariable magnetization direction; a second magnetic layer having apinned magnetization direction; and a tunnel barrier layer interposedbetween the first magnetic layer and the second magnetic layer, whereinthe second magnetic layer includes a ferromagnetic material with anon-magnetic material added thereto, and a concentration of thenon-magnetic material of the second magnetic layer is less than 10%.

Implementations of the above electronic device may include one or morethe following.

The magnetization directions of the first and second magnetic layers aresubstantially perpendicular to a surface of a layer, and the secondmagnetic layer has a thickness of 10 Å or more and 30 Å or less. Astandard electrode potential of the non-magnetic material is −0.2 ormore. The non-magnetic material is a refractory metal. The non-magneticmaterial is molybdenum (Mo), niobium (Nb), tantalum (Ta) and/or tungsten(W). The first magnetic layer includes a ferromagnetic material same asthe ferromagnetic material except for the non-magnetic material.

In another aspect, an electronic device includes a semiconductor memory,and the semiconductor memory includes a first magnetic layer having avariable magnetization direction; a second magnetic layer having apinned magnetization direction; and a tunnel barrier layer interposedbetween the first magnetic layer and the second magnetic layer, whereinthe second magnetic layer includes a ferromagnetic material with arefractory metal added thereto.

Implementations of the above electronic device may include one or morethe following.

The refractory metal is molybdenum (Mo), niobium (Nb), tantalum (Ta)and/or tungsten (W). The first magnetic layer includes a ferromagneticmaterial same as the ferromagnetic material except for the refractorymetal.

The electronic device may further include a microprocessor whichincludes: a control unit configured to receive a signal including acommand from an outside of the microprocessor, and performs extracting,decoding of the command, or controlling input or output of a signal ofthe microprocessor; an operation unit configured to perform an operationbased on a result that the control unit decodes the command; and amemory unit configured to store data for performing the operation, datacorresponding to a result of performing the operation, or an address ofdata for which the operation is performed, wherein the semiconductormemory is part of the memory unit in the microprocessor.

The electronic device may further include a processor which includes: acore unit configured to perform, based on a command inputted from anoutside of the processor, an operation corresponding to the command, byusing data; a cache memory unit configured to store data for performingthe operation, data corresponding to a result of performing theoperation, or an address of data for which the operation is performed;and a bus interface connected between the core unit and the cache memoryunit, and configured to transmit data between the core unit and thecache memory unit, wherein the semiconductor memory is part of the cachememory unit in the processor.

The electronic device may further include a processing system whichincludes: a processor configured to decode a command received by theprocessor and control an operation for information based on a result ofdecoding the command; an auxiliary memory device configured to store aprogram for decoding the command and the information; a main memorydevice configured to call and store the program and the information fromthe auxiliary memory device such that the processor can perform theoperation using the program and the information when executing theprogram; and an interface device configured to perform communicationbetween at least one of the processor, the auxiliary memory device andthe main memory device and the outside, wherein the semiconductor memoryis part of the auxiliary memory device or the main memory device in theprocessing system.

The electronic device may further include a data storage system whichincludes: a storage device configured to store data and conserve storeddata regardless of power supply; a controller configured to controlinput and output of data to and from the storage device according to acommand inputted form an outside; a temporary storage device configuredto temporarily store data exchanged between the storage device and theoutside; and an interface configured to perform communication between atleast one of the storage device, the controller and the temporarystorage device and the outside, wherein the semiconductor memory is partof the storage device or the temporary storage device in the datastorage system.

The electronic device may further include a memory system whichincludes: a memory configured to store data and conserve stored dataregardless of power supply; a memory controller configured to controlinput and output of data to and from the memory according to a commandinputted form an outside; a buffer memory configured to buffer dataexchanged between the memory and the outside; and an interfaceconfigured to perform communication between at least one of the memory,the memory controller and the buffer memory and the outside, wherein thesemiconductor memory is part of the memory or the buffer memory in thememory system.

These and other aspects, implementations and associated advantages aredescribed in greater detail in the drawings, the description and theclaims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a cross-sectional view illustrating a variable resistanceelement in accordance with a comparative example, and FIG. 1B is a viewshowing a magnetization curve of the first magnetic layer of FIG. 1A.

FIG. 2 is a cross-sectional view illustrating a variable resistanceelement in accordance with an implementation.

FIG. 3 is a graph illustrating a value of Ms*t depending on a thicknessof a second magnetic layer.

FIG. 4 is a graph illustrating a value of TMR depending on a content ofa non-magnetic material and a thickness of a second magnetic layer.

FIG. 5 is a graph illustrating a value of Hk depending on a content of anon-magnetic material and a thickness of a second magnetic layer.

FIG. 6 is an example of configuration diagram of a microprocessorimplementing memory circuitry based on the disclosed technology.

FIG. 7 is an example of configuration diagram of a processorimplementing memory circuitry based on the disclosed technology.

FIG. 8 is an example of configuration diagram of a system implementingmemory circuitry based on the disclosed technology, storage systemimplementing memory circuitry based on the disclosed technology.

FIG. 10 is an example of configuration diagram of a memory systemimplementing memory circuitry based on the disclosed technology.

DETAILED DESCRIPTION

Various examples and implementations of the disclosed technology aredescribed below in detail with reference to the accompanying drawings.

The drawings may not be necessarily to scale and in some instances,proportions of at least some of structures in the drawings may have beenexaggerated in order to clearly illustrate certain features of thedescribed examples or implementations. In presenting a specific examplein a drawing or description having two or more layers in a multi-layerstructure, the relative positioning relationship of such layers or thesequence of arranging the layers as shown reflects a particularimplementation for the described or illustrated example and a differentrelative positioning relationship or sequence of arranging the layersmay be possible. In addition, a described or illustrated example of amulti-layer structure may not reflect all layers present in thatparticular multilayer structure (e.g., one or more additional layers maybe present between two illustrated layers). As a specific example, whena first layer in a described or illustrated multi-layer structure isreferred to as being “on” or “over” a second layer or “on” or “over” asubstrate, the first layer may be directly formed on the second layer orthe substrate but may also represent a structure where one or more otherintermediate layers may exist between the first layer and the secondlayer or the substrate.

FIG. 1A is a cross-sectional view illustrating a variable resistanceelement in accordance with a comparative example, and FIG. 1B is a viewshowing a magnetization curve of a first magnetic layer of FIG. 1A.

First, referring to FIG. 1A, a variable resistance element 10 mayinclude a MTJ (Magnetic Tunnel Junction) structure including a firstmagnetic layer 12 having a variable magnetization direction, a secondmagnetic layer 14 having a pinned magnetization direction, and a tunnelbarrier layer 13 interposed between the first magnetic layer 12 and thesecond magnetic layer 14. In addition to the MTJ structure, the variableresistance element 10 may further include some layers performing variousfunctions. Such layer may improve a characteristic of the MTJ structureor may facilitate fabricating processes.

The first magnetic layer 12 and the second magnetic layer 14 may includea ferromagnetic material. The ferromagnetic material may include a Fealloy, a Co alloy, or a combination thereof. Particularly, in thecomparative example, the first magnetic layer 12 and the second magneticlayer 14 may include FeCoB. A magnetization direction of the firstmagnetic layer 12 is changeable. Thus, the first magnetic layer 12 maystore data depending on the magnetization direction thereof, and may bereferred to as a free layer or a storage layer, etc. Also, since themagnetization direction of the second magnetic layer 14 is fixed, thesecond magnetic layer 14 may be referred to as a pinned layer or areference layer, etc. As represented by solid arrows in FIG. 1A, themagnetization directions of the first and second magnetic layers 12 and14 may be substantially perpendicular to surfaces of the layers 12, 14.

The tunnel barrier layer 13 may cause a change in the magnetizationdirection of the first magnetic layer 12 by tunneling of spin-polarizedelectrons, e.g., in form of a current flowing through the layers of thevariable resistance element 10. The tunnel barrier layer 13 may includeinsulating oxide such as MgO, CaO, SrO, TiO, VO, or NbO, etc.

The variable resistance element 10 may be operated to store data asdescribed below. When a current or voltage is supplied through a contactplug (not shown) coupled to a bottom end of the variable resistanceelement 10 and another contact plug (not shown) coupled to a top end ofthe variable resistance element 10, the magnetization direction of thefirst magnetic layer 12 may change so that the magnetization directionsof the first magnetic layer 12 and the second magnetic layer 14 becomeparallel or non-parallel to each other. For example, when themagnetization directions are parallel to each other, the variableresistance element 10 may exhibit a low resistance state and store data“0” and, when the magnetization directions are non-parallel to eachother, the variable resistance element 10 may exhibit a high resistancestate and store data “1”.

However, since the ferromagnetic material used as the second magneticlayer 14, for example, FeCoB has a large value of Ms (MagneticSaturation), a very strong stray field may be generated by the secondmagnetic layer 14 (see dotted arrows). Under the influence of this strayfield, a bias magnetic field in the first magnetic layer 12 may begenerated. This is described in more detail with reference to FIG. 1B.

In FIG. 1B a dotted line A shows a case where a bias magnetic field doesnot exist in the first magnetic layer 12, and a solid line B shows acase where a bias magnetic field exists in the first magnetic layer 12.

Referring to FIG. 1B, when the bias magnetic field does not exist in thefirst magnetic layer 12, the magnetization curve is symmetric withrespect to a magnetization axis. Therefore, a switching of a resistancestate in the variable resistance element 10, e.g., from a low resistancestate to a high resistance state or vice versa, may occur symmetrically.

On the other hand, when the magnetization curve shifts, for example, toa right side (see the arrow) by a bias magnetic field in the firstmagnetic layer 12, the magnetization curve is no longer symmetric withrespect to the magnetization axis. Therefore, an unsymmetrical switchingmay occur, thereby deteriorating a switching characteristic of thevariable resistance element 10.

To sum up, in the comparative example, the switching characteristic ofthe variable resistance element 10 may be deteriorated due to influenceof the strong stray field generated by the second magnetic layer 14.

By an implementation which will be described below, the above issue maybe addressed and furthermore, various characteristics required for avariable resistance element may be satisfied.

FIG. 2 is a cross-sectional view illustrating a variable resistanceelement in accordance with an implementation.

Referring to FIG. 2, a variable resistance element 100 may include a MTJstructure including a first magnetic layer 120 having a variablemagnetization direction, a second magnetic layer 140 having a pinnedmagnetization direction, and a tunnel barrier layer 130 interposedbetween the first magnetic layer 120 and the second magnetic layer 140.

The first magnetic layer 120 may include ferromagnetic material. Theferromagnetic material may include an alloy in which the main componentis Fe and/or Co. For example, the first magnetic layer 120 may includeFeCoB. As represented by a solid arrow, the magnetization direction ofthe first magnetic layer 120 may be substantially perpendicular to asurface of the first magnetic layer 120. That is, the magnetizationdirection of the first magnetic layer 120 may be changed between adownward direction from top to bottom and an upward direction frombottom to top.

The second magnetic layer 140 may include ferromagnetic material with anon-magnetic material added thereto. The ferromagnetic material mayinclude an alloy in which the main component is Fe and/or Co, forexample, FeCoB. The non-magnetic material may include various transitionmetals such as Zr, Nb, Mo, Tc, Ru, Ta, W, etc. The ferromagneticmaterial with the non-magnetic material added thereto indicates theferromagnetic material is the main component and the non-magneticmaterial is a relatively minor component. As represented by a solidarrow, the magnetization direction of the second magnetic layer 140 maybe substantially perpendicular to the surface of the second magneticlayer 140. That is, the magnetization direction of the second magneticlayer 140 may be in a downward direction. When the second magnetic layer140 includes a non-magnetic material, the value of Ms of the secondmagnetic layer 140 may be reduced. Experimental results comparing Ms*tversus thickness is shown in FIG. 3.

FIG. 3 is a graph illustrating Ms*t values versus thickness of thesecond magnetic layer 140. Specifically, the horizontal axis of FIG. 3represents the thickness and the vertical axis of FIG. 3 representsnormalized Ms*t (Magnetic Saturation*thickness). Case1 of FIG. 3 reportsvalues in which the second magnetic layer is FeCoB without the additionof a non-magnetic material, similar to the MTJ structure of thecomparative example. Case2 of FIG. 3 represents a second magnet layercomprised of FeCoB with 5% molybdenum (Mo). Case3 of FIG. 3 represents asecond magnetic layer comprised of FeCoB with 10% molybdenum (Mo).

Referring to FIG. 3, the value of Ms*t of Case2 or Case3 is reducedcompared to Case1.

Therefore, in comparison with the comparative example, the stray fieldgenerated by the second magnetic layer 140 may be reduced, and the biasmagnetic field in the first magnetic layer 120 may be reduced in thisimplementation. As a result, switching characteristics of the variableresistance element 100 may be improved compared to the comparativeexample.

However, although the second magnetic layer 140 includes non-magneticmaterial to reduce the stray field from the second magnetic layer 140other characteristics required for the variable resistance element 100should not deteriorate. That is, in order to satisfy variouscharacteristics required for the variable resistance elements 100, typeand/or a content of the non-magnetic material, thickness of the secondmagnetic layer 140 and the like should be precisely controlled while thesecond magnetic layer 140 includes the non-magnetic material. Since itis not necessary to reduce a stray field from the first magnetic layer120, the first magnetic layer 120 may not include the non-magneticmaterial to maintain its required characteristics.

The tunnel barrier layer 130 may change the magnetization direction ofthe first magnetic layer 120 by tunneling of spin-polarized electrons,e.g., in the form of current flowing through the layers of the variableresistance element 100. The tunnel barrier layer 130 may includeinsulating oxide such as MgO, CaO, SrO, TiO, VO, or NbO, etc.

In the above MTJ structure, positions of the first magnetic layer 120and second magnetic layer 140 may be reversed. That is, it is possiblethat the second magnetic layer 140 serving as a pinned layer is locatedunder the first magnetic layer 120 serving as a free layer.

Furthermore, in addition to the MTJ structure, the variable resistanceelement 100 may further include other layers performing variousfunctions. For example, one or more layers may be included to improvecharacteristics of the MTJ structure or facilitate fabricatingprocesses. In this implementation, the variable resistance element 100may further include an under layer 110 which is disposed under the MTJstructure, a magnetic correction layer 150 which is disposed over theMTJ structure and/or a capping layer 160 which is provided at anuppermost part of the variable resistance element 100.

The under layer 110 may perform various functions as needed. Forexample, the under layer 110 may increase adhesion between a contactplug (not shown) disposed under the variable resistance element 100 anda layer disposed over the under layer 110, for example, the firstmagnetic layer 120. In addition, the under layer 110 may improve thequality of the layer disposed over the under layer 110 such ascrystallinity, roughness, etc. However, other implementations are alsopossible for the under layer 110. The under layer 110 may be asingle-layered structure or a multi-layered structure interposed betweenthe MTJ structure and the contact plug (not shown).

The magnetic correction layer 150 may offset influence of the strayfield generated by the second magnetic layer 140. The magneticcorrection layer 150 may include anti-ferromagnetic material orferromagnetic material which has a magnetization direction non-parallelto the magnetization direction of the second magnetic layer 140. In thiscase, as influence on the first magnetic layer 120 that is caused by thestray field of the second magnetic layer 140 is reduced, a bias magneticfield in the first magnetic layer 120 may be further reduced. Since thestray field of the second magnetic layer 140 is reduced due to thenon-magnetic material included in the second magnetic layer 140, thethickness of the magnetic correction layer 150 may be reduced comparedto when the second magnetic layer 140 does not include the non-magneticmaterial. Furthermore, the magnetic correction layer 150 may be omitted.Since the thickness to be etched is reduced in the patterning processfor forming the variable resistance element 100, the patterning processmay be facilitated.

The capping layer 160 may serve as a hard mask in the patterning processfor forming the variable resistance element 100 and may include variousconductive materials.

However, a layered-structure of the variable resistance element 100 isnot limited to the layered-structure shown in FIG. 2. The variableresistance element 100 may have various layered-structures as long asthe variable resistance element 100 includes the MTJ structure.

An example of a method for fabricating the variable resistance element100 is described. First, the under layer 110, the first magnetic layer120, the tunnel barrier layer 130 and the second magnetic layer 140, themagnetic correction layer 150 and the capping layer 160 may besequentially formed over a substrate (not shown) in which certain lowerstructures are formed. The second magnetic layer 140 may be formed bydepositing an alloy of ferromagnetic material and non-magnetic materialover the tunnel barrier layer 130 or by performing co-sputtering offerromagnetic material and non-magnetic material. Then, the under layer110, the first magnetic layer 120, the tunnel barrier layer 130 and thesecond magnetic layer 140, the magnetic correction layer 150 and thecapping layer 160 may be etched using a mask (now shown). As a result,the variable resistance element 100 which is patterned may be formed ina certain shape.

Meanwhile, as described above, the second magnetic layer 140 should beprecisely controlled in order to prevent deterioration ofcharacteristics of the variable resistance element 100. This isdescribed below in more detail.

First, the non-magnetic material content of the second magnetic layer140 may be less than 10%. That is, when the second magnetic layer 140 isFeCoBX (where, X is non-magnetic material), the mathematical formula ofX/FeCoBX<0.1 may be satisfied. It is desirable to maintain the contentof the non-magnetic material less than 10% because the value of TMR(Tunneling Magneto-Resistance) is greatly reduced when the content ofthe non-magnetic material is 10% or more. The value of TMR may besubstantially proportional to the difference in resistance between thelow resistance state and the high resistance state. Therefore, when thevalue of TMR is small the variable resistance element 100 cannoteffectively serve as an actual variable resistance element which storesdata using the difference in resistance between the low resistance stateand the high resistance state. The results of an experiment related toare shown in FIG. 4.

FIG. 4 is a graph illustrating a value of TMR depending on the contentof non-magnetic material and the thickness of the second magnetic layer.Specifically, the horizontal axis of FIG. 4 represents the thickness ofthe second magnetic layer and the vertical axis of FIG. 4 represents anormalized value of TMR. Case1 of FIG. 4 represents a second magneticlayer having FeCoB without adding a non-magnetic material, similar tothe MTJ structure of the comparative example. Case2 of FIG. 4 representsa second magnetic layer having FeCoB with 5% of molybdenum (Mo). Case3of FIG. 4 represents a second magnetic layer having FeCoB with 10% ofmolybdenum (Mo).

Referring to FIG. 4, Case3, it is shown that the value of TMR issubstantially 0, regardless of the thickness of the second magneticlayer. That is, when the content of the added non-magnetic material is10%, there is no difference in resistance between the low resistancestate and the high resistance state, so the MTJ structure cannot have avariable resistance characteristic. On the other hand, in Case2, whenthe thickness of the second magnetic layer increases to a certain level,for example, 10 Å or more, the value of TMR becomes close to that ofCase1.

As a result, when the content of the non-magnetic material that is addedto the second magnetic layer is less than 10%, the stray field from thesecond magnetic layer may be reduced and the required value of TMR maybe satisfied.

The second magnetic layer 140 with the non-magnetic material having anappropriate content may have a thickness between 10 Å and 30 Å. This isbecause the required TMR value may be satisfied when the thickness ofthe second magnetic layer 140 is 10 Å or more, as described above.Furthermore, as shown in the result of the experiment of FIG. 5, themagnetization direction of the second magnetic layer 140 may not beperpendicular to the surface of the second magnetic layer 140 when thethickness of the second magnetic layer 140 is larger than 30 Å.

FIG. 5 is a graph illustrating a value of Hk depending on non-magneticmaterial content and the thickness of a second magnetic layer.Specifically, the horizontal axis of FIG. 5 represents thickness of thesecond magnetic layer and the vertical axis of FIG. 5 represents anormalized value of Hk (perpendicular anisotropy field). Case1 of FIG. 5represents a second magnetic layer having FeCoB without addingnon-magnetic material, similar to the MTJ structure of the comparativeexample. Case2 of FIG. 5 represents a second magnetic layer having FeCoBwith 5% of molybdenum (Mo).

Referring to FIG. 5, Case2, the magnetization direction of the secondmagnetic layer is not perpendicular when the thickness of the secondmagnetic layer is larger than 30 Å.

As a result, it is desirable that the second magnetic layer with thenon-magnetic material has a thickness of 30 Å or less so that the strayfield from the second magnetic layer may be reduced, and the requiredvalue of Hk may be satisfied. Furthermore, it is desirable that thesecond magnetic layer has a thickness of 10 Å or more so that therequired value of TMR may also be satisfied.

Third, a metal with a standard electrode potential (E° (V)) is higherthan a certain threshold value, for example, −0.2 or more may be used asthe non-magnetic material added to the second magnetic layer 140. Forexample, Mo, Nb, Ta and/or W may be used. In this case, since oxygenaffinity of the second magnetic layer 140 decreases, defects due tocoupling of the second magnetic layer 140 and the tunnel barrier layer130, positioned under the second magnetic layer 140, may be prevented.As a result, the stray field from the second magnetic layer 140 may bereduced, and the required characteristics of the tunnel barrier layer130 may be satisfied.

Fourth, a refractory metal with a melting point higher than a certainthreshold value, for example, 2000° C. or more may be used as thenon-magnetic material added to the second magnetic layer 140. Forexample, Mo, Nb, Ta and/or W may be used. In this case, diffusion of thenon-magnetic material from the second magnetic layer 140 to anotherlayer may be reduced. As a result, the stray field from the secondmagnetic layer 140 may be reduced, and deterioration of characteristicsof other layers, due to the diffusion of the non-magnetic material, maybe prevented.

The above and other memory circuits or semiconductor devices based onthe disclosed technology can be used in various devices or systems.FIGS. 6-10 provide some examples of devices or systems that canimplement memory circuits disclosed herein.

FIG. 6 is an example of configuration diagram of a microprocessorimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 6, a microprocessor 1000 may perform tasks forcontrolling and tuning a series of processes of receiving data fromvarious external devices, processing the data, and outputting processingresults to external devices. The microprocessor 1000 may include amemory unit 1010, an operation unit 1020, a control unit 1030, and soon. The microprocessor 1000 may be various data processing units such asa central processing unit (CPU), a graphic processing unit (GPU), adigital signal processor (DSP) and an application processor (AP).

The memory unit 1010 is a part which stores data in the microprocessor1000, as a processor register, register or the like. The memory unit1010 may include a data register, an address register, a floating pointregister and so on. Besides, the memory unit 1010 may include variousregisters. The memory unit 1010 may perform the function of temporarilystoring data for which operations are to be performed by the operationunit 1020, result data of performing the operations and addresses wheredata for performing of the operations are stored.

The memory unit 1010 may include one or more of the above-describedsemiconductor devices in accordance with the implementations. Forexample, the memory unit 1010 may include a first magnetic layer havinga variable magnetization direction; a second magnetic layer having apinned magnetization direction; and a tunnel barrier layer interposedbetween the first magnetic layer and the second magnetic layer, whereinthe second magnetic layer includes a ferromagnetic material withmolybdenum (Mo) added thereto. Through this, a fabrication process ofthe memory unit 1010 may be easy and data storage characteristics of thememory unit 1010 may be improved. As a consequence, operatingcharacteristics of the microprocessor 1000 may be improved.

The operation unit 1020 may perform four arithmetical operations orlogical operations according to results that the control′ unit 1030decodes commands. The operation unit 1020 may include at least onearithmetic logic unit (ALU) and so on.

The control unit 1030 may receive signals from the memory unit 1010, theoperation unit 1020 and an external device of the microprocessor 1000,perform extraction, decoding of commands, and controlling input andoutput of signals of the microprocessor 1000, and execute processingrepresented by programs.

The microprocessor 1000 according to the present implementation mayadditionally include a cache memory unit 1040 which can temporarilystore data to be inputted from an external device other than the memoryunit 1010 or to be outputted to an external device. In this case, thecache memory unit 1040 may exchange data with the memory unit 1010, theoperation unit 1020 and the control unit 1030 through a bus interface1050.

FIG. 7 is an example of configuration diagram of a processorimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 7, a processor 1100 may improve performance andrealize mufti-functionality by including various functions other thanthose of a microprocessor which performs tasks for controlling andtuning a series of processes of receiving data from various externaldevices, processing the data, and outputting processing results toexternal devices. The processor 1100 may include a core unit 1110 whichserves as the microprocessor, a cache memory unit 1120 which serves tostoring data temporarily, and a bus interface 1130 for transferring databetween internal and external devices. The processor 1100 may includevarious system-on-chips (SoCs) such as a multi-core processor, a graphicprocessing unit (GPU) and an application processor (AP).

The core unit 1110 of the present implementation is a part whichperforms arithmetic logic operations for data inputted from an externaldevice, and may include a memory unit 1111, an operation unit 1112 and acontrol unit 1113.

The memory unit 1111 is a part which stores data in the processor 1100,as a processor register, a register or the like. The memory unit 1111may include a data register, an address register, a floating pointregister and so on. Besides, the memory unit 1111 may include variousregisters. The memory unit 1111 may perform the function of temporarilystoring data for which operations are to be performed by the operationunit 1112, result data of performing the operations and addresses wheredata for performing of the operations are stored. The operation unit1112 is a part which performs operations in the processor 1100. Theoperation unit 1112 may perform four arithmetical operations, logicaloperations, according to results that the control unit 1113 decodescommands, or the like. The operation unit 1112 may include at least onearithmetic logic unit (ALU) and so on. The control unit 1113 may receivesignals from the memory unit 1111, the operation unit 1112 and anexternal device of the processor 1100, perform extraction, decoding ofcommands, controlling input and output of signals of processor 1100, andexecute processing represented by programs.

The cache memory unit 1120 is a part which temporarily stores data tocompensate for a difference in data processing speed between the coreunit 1110 operating at a high speed and an external device operating ata low speed. The cache memory unit 1120 may include a primary storagesection 1121, a secondary storage section 1122 and a tertiary storagesection 1123. In general, the cache memory unit 1120 includes theprimary and secondary storage sections 1121 and 1122, and may includethe tertiary storage section 1123 in the case where high storagecapacity is required. As the occasion demands, the cache memory unit1120 may include an increased number of storage sections. That is tosay, the number of storage sections which are included in the cachememory unit 1120 may be changed according to a design. The speeds atwhich the primary, secondary and tertiary storage sections 1121, 1122and 1123 store and discriminate data may be the same or different. Inthe case where the speeds of the respective storage sections 1121, 1122and 1123 are different, the speed of the primary storage section 1121may be largest. At least one storage section of the primary storagesection 1121, the secondary storage section 1122 and the tertiarystorage section 1123 of the cache memory unit 1120 may include one ormore of the above-described semiconductor devices in accordance with theimplementations. For example, the cache memory unit 1120 may include afirst magnetic layer having variable magnetization direction; a secondmagnetic layer having a pinned magnetization direction; and a tunnelbarrier layer interposed between the first magnetic layer and the secondmagnetic layer, wherein the second magnetic layer includes aferromagnetic material with molybdenum (Mo) added thereto. Through this,a fabrication process of the cache memory unit 1120 may be easy and datastorage characteristics of the cache memory unit 1120 may be improved.As a consequence, operating characteristics of the processor 1100 may beimproved.

Although it was shown in FIG. 7 that all the primary, secondary andtertiary storage sections 1121, 1122 and 1123 are configured inside thecache memory unit 1120, it is to be noted that all the primary,secondary and tertiary storage sections 1121, 1122 and 1123 of the cachememory unit 1120 may be configured outside the core unit 1110 and maycompensate for a difference in data processing speed between the coreunit 1110 and the external device. Meanwhile, it is to be noted that theprimary storage section 1121 of the cache memory unit 1120 may bedisposed inside the core unit 1110 and the secondary storage section1122 and the tertiary storage section 1123 may be configured outside thecore unit 1110 to strengthen the function of compensating for adifference in data processing speed. In another implementation, theprimary and secondary storage sections 1121, 1122 may be disposed insidethe core units 1110 and tertiary storage sections 1123 may be disposedoutside core units 1110.

The bus interface 1130 is a part which connects the core unit 1110, thecache memory unit 1120 and external device and allows data to beefficiently transmitted.

The processor 1100 according to the present implementation may include aplurality of core units 1110, and the plurality of core units 1110 mayshare the cache memory unit 1120. The plurality of core units 1110 andthe cache memory unit 1120 may be directly connected or be connectedthrough the bus interface 1130. The plurality of core units 1110 may beconfigured in the same way as the above-described configuration of thecore unit 1110. In the case where the processor 1100 includes theplurality of core unit 1110, the primary storage section 1121 of thecache memory unit 1120 may be configured in each core unit 1110 incorrespondence to the number of the plurality of core units 1110, andthe secondary storage section 1122 and the tertiary storage section 1123may be configured outside the plurality of core units 1110 in such a wayas to be shared through the bus interface 1130. The processing speed ofthe primary storage section 1121 may be larger than the processingspeeds of the secondary and tertiary storage section 1122 and 1123. Inanother implementation, the primary storage section 1121 and thesecondary storage section 1122 may be configured in each core unit 1110in correspondence to the number of the plurality of core units 1110, andthe tertiary storage section 1123 may be configured outside theplurality of core units 1110 in such a way as to be shared through thebus interface 1130.

The processor 1100 according to the present implementation may furtherinclude an embedded memory unit 1140 which stores data, a communicationmodule unit 1150 which can transmit and receive data to and from anexternal device in a wired or wireless manner, a memory control unit1160 which drives an external memory device, and a media processing unit1170 which processes the data processed in the processor 1100 or thedata inputted from an external input device and outputs the processeddata to an external interface device and so on. Besides, the processor1100 may include a plurality of various modules and devices. In thiscase, the plurality of modules which are added may exchange data withthe core units 1110 and the cache memory unit 1120 and with one another,through the bus interface 1130.

The embedded memory unit 1140 may include not only a volatile memory butalso a nonvolatile memory. The volatile memory may include a DRAM(dynamic random access memory), a mobile DRAM, an SRAM (static randomaccess memory), and a memory with similar functions to above mentionedmemories, and so on. The nonvolatile memory may include a ROM (read onlymemory), a NOR flash memory, a NAND flash memory, a phase change randomaccess memory (PRAM), a resistive random access memory (RRAM), a spintransfer torque random access memory (STTRAM), a magnetic random accessmemory (MRAM), a memory with similar functions.

The communication module unit 1150 may include a module capable of beingconnected with a wired network, a module capable of being connected witha wireless network and both of them. The wired network module mayinclude a local area network (LAN), a universal serial bus (USB) anEthernet, power line communication (PLC) such as various devices whichsend and receive data through transmit lines, and so on. The wirelessnetwork module may include Infrared Data Association (IrDA), codedivision multiple access (CDMA), time division multiple access (TDMA),frequency division multiple access (FDMA), a wireless LAN, Zigbee, aubiquitous sensor network (USN), Bluetooth, radio frequencyidentification (RFID), long term evolution (LTE), near fieldcommunication (NFC), a wireless broadband Internet (Wibro), high speeddownlink packet access (HSDPA), wideband CDMA (CDMA), ultra wideband(UWB) such as various devices which send and receive data withouttransmit lines, and so on.

The memory control unit 1160 is to administrate and process datatransmitted between the processor 1100 and an external storage deviceoperating according to a different communication standard. The memorycontrol unit 1160 may include various memory controllers, for example,devices which may control IDE (Integrated Device Electronics), SATA(Serial Advanced Technology Attachment), SCSI (Small Computer SystemInterface), RAID (Redundant Array of Independent Disks), an SSD (solidstate disk), eSATA (External SATA), PCMCIA (Personal Computer MemoryCard International Association), a USB (universal serial bus), a securedigital (SD) card, a mini secure digital (mSD) card, a micro securedigital (micro SD) card, a secure digital high capacity (SDHC) card, amemory stick card, a smart media (SM) card, a multimedia card (MMC), anembedded MMC (eMMC), a compact flash (CE) card, and so on.

The media processing unit 1170 may process the data processed in theprocessor 1100 or the data inputted in the forms of image voice andothers from the external input device and output the data to theexternal interface device. The media processing unit 1170 may include agraphic processing unit (GPU), a digital signal′ processor (DSP), a highdefinition audio device (HD audio), a high definition multimediainterface (HDMI) controller, and so on.

FIG. 8 is an example of configuration diagram of a system implementingmemory circuitry based on the disclosed technology.

Referring to FIG. 8, a system 1200 as an apparatus for processing datamay perform input, processing, output, communication, storage, etc. toconduct a series of manipulations for data. The system 1200 may includea processor 1210, a main memory device 1220, an auxiliary memory device1230, an interface device 1240, and so on. The system 1200 of thepresent implementation may be various electronic systems which operateusing processors, such as a computer, a server, a PDA (personal digitalassistant), a portable computer, a web tablet, a wireless phone, amobile phone, a smart phone, a digital music player, a PMP (portablemultimedia player), a camera, a global positioning system (GPS), a videocamera, a voice recorder, a telematics, an audio visual (AV) system, asmart television, and so on.

The processor 1210 may decode inputted commands and processes operation,comparison, etc. for the data stored in the system 1200, and controlsthese operations. The processor 1210 may include a microprocessor unit(MPU), a central processing unit (CPU), a single/multi-core processor, agraphic processing unit (GPU), an application processor (AP), a digitalsignal processor (DSP), and so on.

The main memory device 1220 is a storage which can temporarily store,call and execute program codes or data from the auxiliary memory device1230 when programs are executed and can conserve memorized contents evenwhen power supply is cut off. The main memory device 1220 may includeone or more of the above-described semiconductor devices in accordancewith the implementations. For example, the main memory device 1220 mayinclude a first magnetic layer having a variable magnetizationdirection; a second magnetic layer having a pinned magnetizationdirection; and a tunnel barrier layer interposed between the firstmagnetic layer and the second magnetic layer, wherein the secondmagnetic layer includes a ferromagnetic material with molybdenum (Mo)added thereto. Through this, a fabrication process of the main memorydevice 1220 may be easy and data storage characteristics of the mainmemory device 1220 may be improved. As a consequence, operatingcharacteristics of the system 1200 may be improved.

Also, the main memory device 1220 may further include a static randomaccess memory (SRAM), a dynamic random access memory (DRAM), and so on,of a volatile memory type in which all contents are erased when powersupply is cut off. Unlike this, the main memory device 1220 may notinclude the semiconductor devices according to the implementations, butmay include a static random access memory (SRAM), a dynamic randomaccess memory (DRAM), and so on, of a volatile memory type in which allcontents are erased when power supply is cut off.

The auxiliary memory device 1230 is a memory device for storing programcodes or data. While the speed of the auxiliary memory device 1230 isslower than the main memory device 1220, the auxiliary memory device1230 can store a larger amount of data. The auxiliary memory device 1230may include one or more of the above-described semiconductor devices inaccordance with the implementations. For example, the auxiliary memorydevice 1230 may include a first magnetic layer having a variablemagnetization direction; a second magnetic layer having a pinnedmagnetization direction; and a tunnel barrier layer interposed betweenthe first magnetic layer and the second magnetic layer, wherein thesecond magnetic layer includes a ferromagnetic material with molybdenum(Mo) added thereto. Through this, a fabrication process of the auxiliarymemory device 1230 may be easy and data storage characteristics of theauxiliary memory device 1230 may be improved. As a consequence,operating characteristics of the system 1200 may be improved.

Also the auxiliary memory device 1230 may further include a data storagesystem (see the reference numeral 1300 of FIG. 10) such as a magnetictape using magnetism, a magnetic disk, a laser disk using optics, amagneto-optical disc using both magnetism and optics, a solid state disk(SSD), a USB memory (universal serial bus memory), a secure digital (SD)card, a mini secure digital (mSD) card, a micro secure digital (microSD) card, a secure digital high capacity (SDHC) card, a memory stickcard, a smart media (SM) card, a multimedia card (MMC), an embedded MMC(eMMC), a compact flash (CF) card, and so on. Unlike this, the auxiliarymemory device 1230 may not include the semiconductor devices accordingto the implementations, but may include data storage systems (see thereference numeral 1300 of FIG. 10) such as a magnetic tape usingmagnetism, a magnetic disk, a laser disk using optics, a magneto-opticaldisc using both magnetism and optics, a solid state disk (SSD), a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on.

The interface device 1240 may be to perform exchange of commands anddata between the system 1200 of the present implementation and anexternal device. The interface device 1240 may be a keypad, a keyboard amouse, a speaker, a mike, a display, various human interface devices(HIDs), a communication device, and so on. The communication device mayinclude a module capable of being connected with a wired network, amodule capable of being connected with a wireless network and both ofthem. The wired network module may include a local area network (LAN), auniversal serial bus (USB), an Ethernet, power line communication (PLC),such as various devices which send and receive data through transmitlines, and so on. The wireless network module may include Infrared DataAssociation (IrDA), code division multiple access (CDMA), time divisionmultiple access (TDMA), frequency division multiple access (FDMA), awireless LAN, Zigbee, a ubiquitous sensor network (USN), Bluetooth,radio frequency identification (RFID), long term evolution (LTE), nearfield communication (NFC), a wireless broadband Internet (Wibro), highspeed downlink packet access (HSDPA), wideband CDMA (WCDMA), ultrawideband (UWB), such as various devices which send and receive datawithout transmit lines, and so on.

FIG. 9 is an example of configuration diagram of a data storage systemimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 9, a data storage system 1300 may include a storagedevice 1310 which has a nonvolatile characteristic as a component forstoring data, a controller 1320 which controls the storage device 1310,an interface 1330 for connection with an external device, and atemporary storage device 1340 for storing data temporarily. The datastorage system 1300 may be a disk type such as a hard disk drive (HDD),a compact disc read only memory (CDROM), a digital versatile disc (DVD),a solid state disk (SSD), and so on, and a card type such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on.

The storage device 1310 may include a nonvolatile memory which storesdata semi-permanently. The nonvolatile memory may include a ROM (readonly memory), a NOR flash memory, a NAND flash memory, a phase changerandom access memory (PRAM), a resistive random access memory (RRAM), amagnetic random access memory (MRAM), and so on.

The controller 1320 may control exchange of data between the storagedevice 1310 and the interface 1330. To this end, the controller 1320 mayinclude a processor 1321 for performing an operation for, processingcommands inputted through the interface 1330 from an outside of the datastorage system 1300 and so on.

The interface 1330 is to perform exchange of commands and data betweenthe data storage system 1300 and the external device. In the case wherethe data storage system 1300 is a card type, the interface 1330 may becompatible with interfaces which are used in devices, such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on, or be compatible with interfaceswhich are used in devices similar to the above mentioned devices. In thecase where the data storage system 1300 is a disk type, the interface1330 may be compatible with interfaces, such as IDE (Integrated DeviceElectronics) SATA (Serial Advanced Technology Attachment), SCSI (SmallComputer System Interface), eSATA (External SATA), PCMCIA (PersonalComputer Memory Card International Association), a USB (universal serialbus), and so on, or be compatible with the interfaces which are similarto the above mentioned interfaces. The interface 1330 may be compatiblewith one or more interfaces having a different type from each other.

The temporary storage device 1340 can store data temporarily forefficiently transferring data between the interface 1330 and the storagedevice 1310 according to diversifications and high performance of aninterface with an external device, a controller and a system. Thetemporary storage device 1340 for temporarily storing data may includeone or more of the above-described semiconductor devices in accordancewith the implementations. The temporary storage device 1340 may includea first magnetic layer having a variable magnetization direction; asecond magnetic layer having a pinned magnetization direction; and atunnel barrier layer interposed between the first magnetic layer and thesecond magnetic layer, wherein the second magnetic layer includes aferromagnetic material with molybdenum (Mo) added thereto. Through this,a fabrication process of the storage device 1310 or the temporarystorage device 1340 may be easy and data storage characteristics of thestorage device 1310 or the temporary storage device 1340 may beimproved. As a consequence, operating characteristics and data storagecharacteristics of the data storage system 1300 may be improved.

FIG. 10 is an example of configuration diagram of a memory systemimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 10, a memory system 1400 may include a memory 1410which has a nonvolatile characteristic as a component for storing data,a memory controller 1420 which controls the memory 1410, an interface1430 for connection with an external device, and so on. The memorysystem 1400 may be a card type such as a solid state disk (SSD), a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC) an embedded MMC (eMMC) acompact flash (CF) card, and so on.

The memory 1410 for storing data may include one or more of theabove-described semiconductor devices in accordance with theimplementations. For example, the memory 1410 may include a firstmagnetic layer having a variable magnetization direction; a secondmagnetic layer having a pinned magnetization direction; and a tunnelbarrier layer interposed between the first magnetic layer and the secondmagnetic layer, wherein the second magnetic layer includes aferromagnetic material with molybdenum (Mo) added thereto. Through this,a fabrication process of the memory 1410 may be easy and data storagecharacteristics of the memory 1410 may be improved. As a consequence,operating characteristics and data storage characteristics of the memorysystem 1400 may be improved.

Also, the memory 1410 according to the present implementation mayfurther include a ROM (read only memory), a NOR flash memory, a NANDflash memory, a phase change random access memory (PRAM), a resistiverandom access memory (RRAM), a magnetic random access memory (MRAM), andso on, which have a nonvolatile characteristic.

The memory controller 1420 may control exchange of data between thememory 1410 and the interface 1430. To this end, the memory controller1420 may include a processor 1421 for performing an operation for andprocessing commands inputted through the interface 1430 from an outsideof the memory system 1400.

The interface 1430 is to perform exchange of commands and data betweenthe memory system 1400 and the external device. The interface 1430 maybe compatible with interfaces which are used in devices, such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on, or be compatible with interfaceswhich are used in devices similar to the above mentioned devices. Theinterface 1430 may be compatible with one or more interfaces having adifferent type from each other.

The memory system 1400 according to the present implementation mayfurther include a buffer memory 1440 for efficiently transferring databetween the interface 1430 and the memory 1410 according todiversification and high performance of an interface with an externaldevice, a memory controller and a memory system. For example, the buffermemory 1440 for temporarily storing data may include one or more of theabove-described semiconductor devices in accordance with theimplementations. The buffer memory 1440 may include a first magneticlayer having a variable magnetization direction; a second magnetic layerhaving a pinned magnetization direction; and a tunnel barrier layerinterposed between the first magnetic layer and the second magneticlayer, wherein the second magnetic layer includes a ferromagneticmaterial with molybdenum (Mo) added thereto. Through this, a fabricationprocess of the buffer memory 1440 may be easy and data storagecharacteristics of the buffer memory 1440 may be improved. As aconsequence, operating characteristics and data storage characteristicsof the memory system 1400 may be improved.

Moreover, the buffer memory 1440 according to the present implementationmay further include an SRAM (static random access memory), a DRAM(dynamic random access memory), and so on, which have a volatilecharacteristic, and a phase change random access memory (PRAM), aresistive random access memory (RRAM), a spin transfer torque randomaccess memory (STTRAM), a magnetic random access memory (MRAM), and soon, which have a nonvolatile characteristic. Unlike this, the buffermemory 1440 may not include the semiconductor devices according to theimplementations, but may include an SRAM (static random access memory),a DRAM (dynamic random access memory), and so on, which have a volatilecharacteristic, and a phase change random access memory (PRAM), aresistive random access memory (RRAM), a spin transfer torque randomaccess memory (STTRAM), a magnetic random access memory (MRAM), and soon, which have a nonvolatile characteristic.

Features in the above examples of electronic devices or systems in FIGS.6-10 based on the memory devices disclosed in this document may beimplemented in various devices, systems or applications. Some examplesinclude mobile phones or other portable communication devices, tabletcomputers, notebook or laptop computers, game machines, smart TV sets,TV set top boxes, multimedia servers, digital cameras with or withoutwireless communication functions, wrist watches or other wearabledevices with wireless communication capabilities.

While this patent document contains many specifics, these should not beconstrued as limitations on the scope of any invention or of what may beclaimed, but rather as descriptions of features that may be specific toparticular embodiments of particular inventions. Certain features thatare described in this patent document in the context of separateembodiments can also be implemented in combination in a singleembodiment. Conversely, various features that are described in thecontext of a single embodiment can also be implemented in multipleembodiments separately or in any suitable subcombination. Moreover,although features may be described above as acting in certaincombinations and even initially claimed as such, one or more featuresfrom a claimed combination can in some cases be excised from thecombination, and the claimed combination may be directed to asubcombination or variation of a subcombination.

Similarly, while operations are depicted in the drawings in a particularorder, this should not be understood as requiring that such operationsbe performed in the particular order shown or in sequential order, orthat all illustrated operations be performed, achieve desirable results.Moreover, the separation of various system components in the embodimentsdescribed in this patent document should not be understood as requiringsuch separation in all embodiments.

Only a few implementations and examples are described. Otherimplementations enhancements and variations can be made based on what isdescribed and illustrated in this patent document.

What is claimed is:
 1. An electronic device comprising a semiconductormemory, wherein the semiconductor memory includes: a first magneticlayer having a variable magnetization direction; a second magnetic layerhaving a pinned magnetization direction; and a tunnel barrier layerinterposed between the first magnetic layer and the second magneticlayer, wherein the second magnetic layer includes FeCoB and molybdenum(Mo) as an additive, wherein a content of the molybdenum in the secondmagnetic layer is more than zero and less than 10%, and wherein thesecond magnetic layer has a thickness of 10 Å to 30 Å.
 2. The electronicdevice of claim 1, wherein the first magnetic layer includes theferromagnetic material, and wherein the second magnetic layer includesthe ferromagnetic material which is substantially same as that includedin the first magnetic layer and further includes molybdenum.
 3. Theelectronic device of claim 1, wherein the variable magnetizationdirection of the first magnetic layer is substantially perpendicular toa surface of the first magnetic layer, wherein the pinned magnetizationdirection of the second magnetic layer is substantially perpendicular toa surface of the second magnetic layer.
 4. The electronic deviceaccording to claim 1, further comprising a microprocessor whichincludes: a control unit configured to receive a signal including acommand from an outside of the microprocessor, and performs extracting,decoding of the command, or controlling input or output of a signal ofthe microprocessor; an operation unit configured to perform an operationbased on a result that the control unit decodes the command; and amemory unit configured to store data for performing the operation, datacorresponding to a result of performing the operation, or an address ofdata for which the operation is performed, wherein the semiconductormemory is part of the memory unit in the microprocessor.
 5. Theelectronic device according to claim 1, further comprising a processorwhich includes: a core unit configured to perform, based on a commandinputted from an outside of the processor, an operation corresponding tothe command, by using data; a cache memory unit configured to store datafor performing the operation, data corresponding to a result ofperforming the operation, or an address of data for which the operationis performed; and a bus interface connected between the core unit andthe cache memory unit, and configured to transmit data between the coreunit and the cache memory unit, wherein the semiconductor memory is partof the cache memory unit in the processor.
 6. The electronic deviceaccording to claim 1, further comprising a processing system whichincludes: a processor configured to decode a command received by theprocessor and control an operation for information based on a result ofdecoding the command; an auxiliary memory device configured to store aprogram for decoding the command and the information; a main memorydevice configured to call and store the program and the information fromthe auxiliary memory device such that the processor can perform theoperation using the program and the information when executing theprogram; and an interface device configured to perform communicationbetween at least one of the processor, the auxiliary memory device andthe main memory device and the outside, wherein the semiconductor memoryis part of the auxiliary memory device or the main memory device in theprocessing system.
 7. The electronic device according to claim 1,further comprising a data storage system which includes: a storagedevice configured to store data and conserve stored data regardless ofpower supply; a controller configured to control input and output ofdata to and from the storage device according to a command inputted forman outside; a temporary storage device configured to temporarily storedata exchanged between the storage device and the outside; and aninterface configured to perform communication between at least one ofthe storage device, the controller and the temporary storage device andthe outside, wherein the semiconductor memory is part of the storagedevice or the temporary storage device in the data storage system. 8.The electronic device according to claim 1, further comprising a memorysystem which includes: a memory configured to store data and conservestored data regardless of power supply; a memory controller configuredto control input and output of data to and from the memory according toa command inputted form an outside; a buffer memory configured to bufferdata exchanged between the memory and the outside; and an interfaceconfigured to perform communication between at least one of the memory,the memory controller and the buffer memory and the outside, wherein thesemiconductor memory is part of the memory or the buffer memory in thememory system.